Package structure and method of fabricating the same

ABSTRACT

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. application Ser.No. 17/120,276, filed on Dec. 14, 2020, now allowed. The priorapplication Ser. No. 17/120,276 is a continuation application of U.S.application Ser. No. 16/441,029, filed on Jun. 14, 2019, which claimsthe priority benefit of U.S. provisional application Ser. No.62/771,588, filed on Nov. 27, 2018. The entirety of each of theabove-mentioned patent applications is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND

Semiconductor devices and integrated circuits used in a variety ofelectronic applications, such as cell phones and other mobile electronicequipment, are typically manufactured on a single semiconductor wafer.The dies of the wafer may be processed and packaged with othersemiconductor devices (e.g. antenna) or dies at the wafer level, andvarious technologies have been developed for the wafer level packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1B are schematic sectional views of various stages in amethod of fabricating an insulating film according to some exemplaryembodiments of the present disclosure.

FIG. 1C is an enlarged view of an insulating film laminated on adielectric layer according to some exemplary embodiments of the presentdisclosure.

FIG. 2A to FIG. 2H are schematic sectional views of various stages in amethod of fabricating a package structure according to some exemplaryembodiments of the present disclosure.

FIG. 3A to FIG. 3G are schematic sectional views of various stages in amethod of fabricating a package structure according to some exemplaryembodiments of the present disclosure.

FIG. 4 is a package structure according to some embodiments of thepresent disclosure.

FIG. 5 is a package structure according to some other embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1A to FIG. 1B are schematic sectional views of various stages in amethod of fabricating an insulating film according to some exemplaryembodiments of the present disclosure. Referring to FIG. 1A, a carrieror a support 102 is provided. The carrier or support 102 may be any typeof carrier or support suitable for forming an insulating film thereon.In one embodiment, the support 102 includes a mold for accommodating andshaping. In some embodiments, a resin material Rx is provided on thesupport 102. The resin material Rx maybe include a base material thatcan be hardened when heated or cured. For example, the base material ofthe resin material Rx may be an epoxy resin-based adhesive material, anacrylic resin-based adhesive material, amine resin-based adhesivematerial or silicone resin-based material, but the disclosure is notlimited thereto. In some embodiments, other types of adhesive materialsmay be suitably used as the resin material Rx. As illustrated in FIG.1A, the resin material Rx includes a plurality of fillers Fx dispersedin the base material of the resin material Rx. The plurality of fillersFx for example, may be inorganic particles such as silica particles,metal oxide particles such as Al₂O₃ particles, or the like, thedisclosure is not limited thereto. The material and/or size of thefillers Fx may be selected based on mechanical properties or electricalproperties of the product requirements. In some embodiments, the fillersFx may be particles of spherical shapes, and may have a variety ofsizes.

In one embodiment, by adding one or more solvent, a viscosity of theresin material Rx is adjusted or lowered. By adding an appropriateamount of the solvent or diluent, the viscosity of the resin material Rxbecomes lowered so that the dispersed fillers Fx can be settled andclustered in one region or at one side of the resin material Rx todefine a filler rich region 104-Fi. For example, when the viscositybecomes lower, the fillers Fx are settled at the lower side and gatheredinto a filler rich region 104-Fi through the action of the gravity,while the upper side with little or none fillers remaining becomes aresin rich region 104-Re. In some embodiments, the viscosity of theresin material Rx is in a range from 1 cP to 40000 cP. In someembodiments, the viscosity of the resin material Rx is adjusted orlowered to 3000 cP or less. In some embodiments, the viscosity of theresin material Rx is adjusted or lowered to a range of 10 cP to 1500 cP.In some embodiments, the viscosity of the resin material Rx is adjustedor lowered to a range of 10 cP to 500 cP. In one embodiment, theviscosity of the resin material Rx is adjusted with the aid of solvents.In some embodiments, the viscosity of the resin material Rx is adjustedwith the aid of solvents, and further baking is performed to help in thesedimentation of the fillers Fx. In another embodiment, the viscosity ofthe resin material Rx is adjusted by using active diluents. In someother embodiments, in addition to adding more diluent, more fillers Fxmay be added. However, the disclosure is not limited thereto, and othersuitable methods may be applied to adjust the viscosity or to form theresin rich region.

Referring to FIG. 1B, after adjusting the viscosity and forming theresin rich region and the filler rich region in the resin material Rx, acuring process is performed to cure or harden the resin material Rx toform an insulating film 104. In the exemplary embodiment, the insulatingfilm 104 contains the resin rich region 104-Re and the filler richregion 104-Fi, and an interface IF is located in between the resin richregion 104-Re and the filler rich region 104-Fi. In some embodiments,the filler rich region 104-Fi may constitute a resin layer RL, whereinthe resin layer RL includes a plurality of fillers Fx. In certainembodiments, the resin rich region 104-Re may constitute an adhesivelayer AL, wherein the adhesive layer AL is substantially filler free orincludes very little fillers. For example, in one embodiment, a contentof the fillers Fx located in the resin layer RL (filler rich region104-Fi) is more than 80% by weight based on a total weight of theinsulating film 104. In certain embodiments, a content of fillers Fxlocated in the adhesive layer AL (resin rich region 104-Re) is less than10% by weight based on a total weight of the insulating film 104. Incertain embodiments, a content of fillers Fx located in the adhesivelayer AL (resin rich region 104-Re) is less than 5% by weight based on atotal weight of the insulating film 104. In some other embodiments, acontent of fillers Fx located in the adhesive layer AL (resin richregion 104-Re) is less than 1% by weight based on a total weight of theinsulating film 104.

In the exemplary embodiment, the resin layer RL (filler rich region104-Fi) and the adhesive layer AL (resin rich region 104-Re) are made ofthe same resin material Rx. Furthermore, in some embodiments, a ratio ofa thickness T1 of the adhesive layer AL to a thickness T2 of the resinlayer RL is in a range of 1:75 to 1:360. For example, in one embodiment,the thickness T1 of the adhesive layer AL (resin rich region 104-Re) isin a range of 0.5 μm to 2 μm. In certain embodiments, the thickness T2of the resin layer RL (filler rich region 104-Fi) is in a range of 150μm to 180 μm. By controlling the ratio of thicknesses (T1/T2) of theresin layer RL (filler rich region 104-Fi) and the adhesive layer AL(resin rich region 104-Re) in such a range, the adhesion strength of theinsulating film 104 can be ensured. The insulating film 104 illustratedherein may be further peeled off or de-bonded from the support 102 andlaminated onto other structures as required. Up to here, the preparationof an insulating film 104 according to some exemplary embodiments of thepresent disclosure is accomplished.

FIG. 1C is an enlarged view of an insulating film 104 laminated on adielectric layer DI according to some exemplary embodiments of thepresent disclosure. As illustrated in FIG. 1C, the insulating film 104obtained in FIG. 1B may, for example, be laminated or attached onto adielectric layer DI (or any other type of adherents). From the enlargedview shown in FIG. 1C, in some embodiments, the interface IF located inbetween the resin rich region 104-Re (adhesive layer AL) and the fillerrich region 104-Fi (resin layer RL) is an uneven interface. For example,the profile of the interface IF located in between the resin rich region104-Re and the filler rich region 104-Fi may be granular and gritty. Incertain embodiments, the interface IF has a wave-like profile (unevenprofile). In some embodiments, as the interface IF is defined along thesurfaces of the stacked fillers Fx, the profile of the interface IFlocated in between the resin rich region 104-Re and the filler richregion 104-Fi is basically defined by the arrangement and configurationsof fillers Fx located in the filler rich region 104-Fi (resin layer RL)and is rugged and uneven. In some embodiments, when compared with theinterface IF, the bottom surface 105S of the insulating film 104 is arelatively smooth surface. That is, the bottom surface 105S of theinsulating film 104 (or an interface between the insulating film 104 andthe dielectric layer DI) has a roughness smaller than that of theinterface IF. In certain embodiments, the bottom surface 105S of theinsulating film 104 has a surface roughness of around 0.1 μm to 1 μm.Furthermore, in some embodiments, the bottom surface 105S of theinsulating film 104 (or an interface between the insulating film 104 andthe dielectric layer DI) has a substantially linear profile.

FIG. 2A to FIG. 2H are schematic sectional views of various stages in amethod of fabricating a package structure according to some exemplaryembodiments of the present disclosure. Referring to FIG. 2A, in someembodiments, a carrier CR is provided. In some embodiments, the carrierCR may be a glass carrier or any suitable carrier for carrying asemiconductor wafer or a reconstituted wafer for the manufacturingmethod of the package structure. In some embodiments, the carrier CR iscoated with a debond layer DB. The material of the debond layer DB maybe any material suitable for bonding and de-bonding the carrier CR fromthe above layer(s) or any wafer(s) disposed thereon.

In some embodiments, the debond layer DB may include a dielectricmaterial layer made of a dielectric material including any suitablepolymer-based dielectric material (such as benzocyclobutene (“BCB”),polybenzoxazole (“PBO”)). In an alternative embodiment, the debond layerDB may include a dielectric material layer made of an epoxy-basedthermal-release material, which loses its adhesive property when heated,such as a light-to-heat-conversion (LTHC) release coating film. In afurther alternative embodiment, the debond layer DB may include adielectric material layer made of an ultra-violet (UV) glue, which losesits adhesive property when exposed to UV lights. In certain embodiments,the debond layer DB may be dispensed as a liquid and cured, or may be alaminate film laminated onto the carrier CR, or may be the like. The topsurface of the debond layer DB, which is opposite to a bottom surfacecontacting the carrier CR, may be levelled and may have a high degree ofcoplanarity. In certain embodiments, the debond layer DB is, forexample, a LTHC layer with good chemical resistance, and such layerenables room temperature de-bonding from the carrier CR by applyinglaser irradiation, however the disclosure is not limited thereto.

In an alternative embodiment, a buffer layer (not shown) may be coatedon the debond layer DB, where the debond layer DB is sandwiched betweenthe buffer layer and the carrier CR, and the top surface of the bufferlayer may further provide a high degree of coplanarity. In someembodiments, the buffer layer may be a dielectric material layer. Insome embodiments, the buffer layer may be a polymer layer which made ofpolyimide, PBO, BCB, or any other suitable polymer-based dielectricmaterial. In some embodiments, the buffer layer may be Ajinomoto BuildupFilm (ABF), Solder Resist film (SR), or the like. In other words, thebuffer layer is optional and may be omitted based on the demand, so thatthe disclosure is not limited thereto.

Furthermore, as illustrated in FIG. 2A, a redistribution layer 202 isformed over the carrier CR. For example, in FIG. 2A, the redistributionlayer 202 is formed on the debond layer DB, and the formation of theredistribution layer 202 includes sequentially forming one or moredielectric layers 202A and one or more conductive layers 202B inalternation. In some embodiments, the redistribution layer 202 includestwo dielectric layers 202A and one conductive layer 202B as shown inFIG. 2A, where the conductive layer 202B is sandwiched between thedielectric layers 202A. However, the disclosure is not limited thereto.The numbers of the dielectric layers 202A and the conductive layer 202Bincluded in the redistribution layer 202 is not limited thereto, and maybe designated and selected based on the demand. For example, the numbersof the dielectric layers 202A and the conductive layers 202B may be oneor more than one.

In certain embodiments, the material of the dielectric layers 202A maybe polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), a nitridesuch as silicon nitride, an oxide such as silicon oxide, phosphosilicateglass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), a combination thereof or the like, which may be patterned usinga photolithography and/or etching process. In some embodiments, thematerial of the dielectric layers 202A may be formed by suitablefabrication techniques such as spin-on coating, chemical vapordeposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) orthe like. The disclosure is not limited thereto.

In some embodiments, the material of the conductive layer 202B may bemade of conductive materials formed by electroplating or deposition,such as aluminum, titanium, copper, nickel, tungsten, and/or alloysthereof, which may be patterned using a photolithography and etchingprocess. In some embodiments, the conductive layer 202B may be patternedcopper layers or other suitable patterned metal layers. Throughout thedescription, the term “copper” is intended to include substantially pureelemental copper, copper containing unavoidable impurities, and copperalloys containing minor amounts of elements such as tantalum, indium,tin, zinc, manganese, chromium, titanium, germanium, strontium,platinum, magnesium, aluminum or zirconium, etc.

Referring to FIG. 2B, after forming the redistribution layer 202, atleast one semiconductor die 206 and a plurality of through insulatorvias 204 are provided on the redistribution layer 202 over the carrierCR. In some embodiments, the through insulator vias 204 are throughintegrated fan-out (“InFO”) vias. In one embodiment, the formation ofthe through insulator vias 204 includes forming a mask pattern (notshown) with openings, then forming a metallic material (not shown)filling up the openings by electroplating or deposition, and removingthe mask pattern to form the through insulator vias 204 on theredistribution layer 202. In certain embodiments, the through insulatorvias 204 fills into a via opening that reveals the conductive layer 202Bof the redistribution layer 202, so that the through insulator vias 204may be electrically connected to the redistribution layer 202. In someembodiments, the material of the mask pattern may include a positivephoto-resist or a negative photo-resist. In one embodiment, the materialof the through insulator vias 204 may include a metal material such ascopper or copper alloys, or the like. However, the disclosure is notlimited thereto.

In an alternative embodiment, the through insulator vias 204 may beformed by forming a seed layer (not shown) on the redistribution layer202; forming the mask pattern with openings exposing portions of theseed layer; forming the metallic material on the exposed portions of theseed layer to form the through insulator vias 204 by plating; removingthe mask pattern; and then removing portions of the seed layer exposedby the through insulator vias 204. For example, the seed layer may be atitanium/copper composited layer. For simplification, only two throughinsulator vias 204 are illustrated in FIG. 2B. However, it should benoted that the number of through insulator vias 204 is not limitedthereto, and can be selected based on requirement.

Furthermore, in some embodiments, at least one dipole antenna 208 may beformed during the formation of the through insulator vias 204. In someembodiments, the dipole antenna 208 has a dimension (e.g., width)greater than that of the through insulator vias 204. However, thepresent disclosure is not limited thereto. In alternative embodiments,the dipole antenna 208 has a dimension (e.g., width) substantially equalto or less than that of the through insulator vias 204. For example, thedipole antenna 208 may be disposed on the redistribution layer 202 andbe adjacent to the through insulator vias 204.

As illustrated in FIG. 2B, at least one semiconductor die 206 is pickedand placed on the redistribution layer 202. In certain embodiments, thesemiconductor die 206 has an active surface AS, and a backside surfaceBS opposite to the active surface AS. For example, the backside surfaceBS of the semiconductor die 206 may be attached to the redistributionlayer 202 through a die attach film 207. By using the die attach film207, a better adhesion between the semiconductor die 206 and theredistribution layer 202 is ensured. In the exemplary embodiment, onlyone semiconductor die 206 is illustrated. However, it should be notedthat the number of semiconductor dies placed on the redistribution layer202 is not limited thereto, and this can be adjusted based on designrequirement.

In the exemplary embodiment, the semiconductor die 206 includes asemiconductor substrate 206 a-1, a plurality of conductive pads 206 a-2,a passivation layer 206 a-3, a plurality of conductive posts 206 a-4,and a protection layer 206 a-5. As illustrated in FIG. 2B, the pluralityof conductive pads 206 a-2 is disposed on the semiconductor substrate206 a-1. The passivation layer 206 a-3 is formed over the semiconductorsubstrate 206 a-1 and has openings that partially expose the conductivepads 206 a-2 on the semiconductor substrate 206 a-1. The semiconductorsubstrate 206 a-1 may be a bulk silicon substrate or asilicon-on-insulator (SOI) substrate, and further includes activecomponents (e.g., transistors or the like) and optionally passivecomponents (e.g., resistors, capacitors, inductors or the like) formedtherein. The conductive pads 206 a-2 may be aluminum pads, copper padsor other suitable metal pads. The passivation layer 206 a-3 may be asilicon oxide layer, a silicon nitride layer, a silicon oxy-nitridelayer or a dielectric layer formed of any suitable dielectric materials.Furthermore, in some embodiments, a post-passivation layer (not shown)is optionally formed over the passivation layer 206 a-3. Thepost-passivation layer covers the passivation layer 206 a-3 and has aplurality of contact openings. The conductive pads 206 a-2 are partiallyexposed by the contact openings of the post passivation layer. Thepost-passivation layer may be a benzocyclobutene (BCB) layer, apolyimide layer, a polybenzoxazole (PBO) layer, or a dielectric layerformed by other suitable polymers. In some embodiments, the conductiveposts 206 a-4 are formed on the conductive pads 206 a-2 by plating. Insome embodiments, the protection layer 206 a-5 is formed on thepassivation layer 206 a-3 or on the post passivation layer, and coveringthe conductive posts 206 a-4 so as to protect the conductive posts 206a-4.

In some embodiments, when more than one semiconductor die 206 are placedon the redistribution layer 202, the semiconductor dies 206 may bearranged in an array, and when the semiconductor dies 206 are arrangedin an array, the through insulator vias 204 may be classified intogroups. The number of the semiconductor dies 206 may correspond to thenumber of groups of the through insulator vias 204. In the exemplaryembodiment, the semiconductor die 206 may be picked and placed on theredistribution layer 202 after the formation of the through insulatorvias 204. However, the disclosure is not limited thereto. In somealternative embodiments, the semiconductor die 206 may be picked andplaced on the redistribution layer 202 before the formation of thethrough insulator vias 204.

In some embodiments, the semiconductor die 206 may be selected fromapplication-specific integrated circuit (ASIC) chips, analog chips (forexample, wireless and radio frequency chips), digital chips (forexample, a baseband chip), integrated passive devices (IPDs), voltageregulator chips, sensor chips, memory chips, or the like. The disclosureis not limited thereto.

Referring to FIG. 2C, an insulating material 210 is formed on theredistribution layer 202 and over the semiconductor die 206. In someembodiments, the insulating material 210 is formed through, for example,a compression molding process, filling up the gaps between thesemiconductor die 206 and the through insulating vias 204 to encapsulatethe semiconductor die 206. The insulating material 208 also fills up thegaps between adjacent through insulator vias 204 and dipole antenna 208to encapsulate the through insulator vias 204 and the dipole antenna208. The conductive posts 206 a-4 and the protection layer 206 a-5 ofthe semiconductor die 206 are encapsulated by and well protected by theinsulating material 210. In other words, the conductive posts 206 a-4and the protection layer 206 a-5 of the semiconductor die 206 are notrevealed and are well protected by the insulating material 210.

In some embodiments, the insulating material 210 includes polymers (suchas epoxy resins, phenolic resins, silicon-containing resins, or othersuitable resins), dielectric materials having low permittivity (Dk) andlow loss tangent (DO properties, or other suitable materials. In analternative embodiment, the insulating material 210 may include anacceptable insulating encapsulation material. In some embodiments, theinsulating material 210 may further include inorganic filler orinorganic compound (e.g. silica, clay, and so on) which can be addedtherein to optimize coefficient of thermal expansion (CTE) of theinsulating material 210. The disclosure is not limited thereto.

Referring to FIG. 2D, in some embodiments, the insulating material 210is partially removed to expose the conductive posts 206 a-5, the throughinsulator vias 204 and the dipole antenna 208. In some embodiments, theinsulating material 210 and the protection layer 206 a-5 are ground orpolished by a planarization step. For example, the planarization step isperformed through a mechanical grinding process and/or a chemicalmechanical polishing (CMP) process until the top surfaces 206-Ts of theconductive posts 206 a-4 are revealed. In some embodiments, the throughinsulator vias 204 may be partially polished so that the top surfaces204-Ts of the through insulator vias 204 are levelled with the topsurfaces 206-Ts of the conductive posts 206 a-4, or levelled with theactive surface AS of the semiconductor die 206. Similarly, the dipoleantenna 208 may be partially polished so that the top surfaces 208-Ts ofthe dipole antenna 208 are levelled with the top surfaces 206-Ts of theconductive posts 206 a-4, or levelled with the active surface AS of thesemiconductor die 206. In other words, the conductive posts 206 a-4, thethrough insulator vias 204 and the dipole antenna 208 may also beslightly grinded/polished.

In the illustrated embodiment, the insulating material 210 is polishedto form an insulating encapsulant 210′. In some embodiments, the topsurface 210-Ts of the insulating encapsulant 210′, the top surface204-Ts of the through insulator vias 204, the top surface 206-Ts of theconductive posts 206 a-4, the top surface of the polished protectionlayer 206 a-5, and the top surface 208-Ts of the dipole antenna 208 arecoplanar and levelled with one another. In some embodiments, after themechanical grinding or chemical mechanical polishing (CMP) steps, acleaning step may be optionally performed. For example, the cleaningstep is preformed to clean and remove the residue generated from theplanarization step. However, the disclosure is not limited thereto, andthe planarization step may be performed through any other suitablemethods.

Referring to FIG. 2E, after the planarization step, a redistributionlayer 212 is formed on the insulating encapsulant 210′, the throughinsulator vias 204, the dipole antenna 208, and on the semiconductor die206. For example, the redistribution layer 212 is formed on the topsurface 204-Ts of the through insulator vias 204, on the top surface206-Ts of the conductive posts 206 a-4, and on the top surface 210-Ts ofthe insulating encapsulant 210′. In some embodiments, the redistributionlayer 212 is electrically connected to the through insulator vias 204,and is electrically connected to the semiconductor die 206 through theconductive posts 206 a-4. In some embodiments, the semiconductor die 206is electrically connected to the through insulator vias 204 through theredistribution layer 212. In certain embodiments, the redistributionlayer 212 is electrically connected to the dipole antenna 208. In theillustrated embodiment, the insulating encapsulant 210′ has a firstsurface 210-S1 and a second surface 210-S2, wherein the second surfaceS10-S2 is opposite to the first surface 210-S1. The redistribution layer202 is located on the second surface 210-S2 of the insulatingencapsulant 210′, whereas the redistribution layer 212 is located on thefirst surface 210-S1 of the insulating encapsulant 210′.

In some embodiments, the formation of the redistribution layer 212includes sequentially forming one or more dielectric layers 212A, andone or more conductive layers 212B in alternation. In certainembodiments, the conductive layers 212B are sandwiched between thedielectric layers 212A. Although only two layers of the conductivelayers 212B and three layers of dielectric layers 212A are illustratedherein, however, the scope of the disclose is not limited by theembodiments of the disclosure. In other embodiments, the number ofconductive layers 212B and the dielectric layers 212A may be adjustedbased on product requirement. In some embodiments, the conductive layers212B are electrically connected to the conductive posts 206 a-4 of thesemiconductor die 206. Furthermore, the conductive layers 212B areelectrically connected to the through insulator vias 204 and the dipoleantenna 208. In some embodiments, the materials of the dielectric layer212A and the conductive layer 212B of the redistribution layer 212 issimilar to a material of the dielectric layer 202A and the conductivelayer 202B mentioned for the redistribution layer 202. Therefore, thedetailed description of the dielectric layer 212A and the conductivelayer 212B will be omitted herein.

After forming the redistribution layer 212, a plurality of conductivepads 212C may be disposed on an exposed top surface of the topmost layerof the conductive layers 212B for electrically connecting withconductive balls. In certain embodiments, the conductive pads 212C arefor example, under-ball metallurgy (UBM) patterns used for ball mount.As shown in FIG. 2E, the conductive pads 212C are formed on andelectrically connected to the redistribution layer 212. In someembodiments, the materials of the conductive pads 212C may includecopper, nickel, titanium, tungsten, or alloys thereof or the like, andmay be formed by an electroplating process, for example. The number ofconductive pads 212C is not limited in this disclosure, and may beselected based on the design layout. In some alternative embodiments,the conductive pads 212C may be omitted. In other words, conductiveballs 214 formed in subsequent steps may be directly disposed on theredistribution layer 212.

After forming the conductive pads 212C, a plurality of conductive balls214 is disposed on the conductive pads 212C and over the redistributionlayer 212. In some embodiments, the conductive balls 214 may be disposedon the conductive pads 212C by a ball placement process or reflowprocess. In some embodiments, the conductive balls 214 are, for example,solder balls or ball grid array (BGA) balls. In some embodiments, theconductive balls 214 are connected to the redistribution layer 212through the conductive pads 212C. In certain embodiments, some of theconductive balls 214 may be electrically connected to the semiconductordie 206 through the redistribution layer 212. Furthermore, some of theconductive balls 214 may be electrically connected to the throughinsulator vias 204 through the redistribution layer 212. The number ofthe conductive balls 214 is not limited to the disclosure, and may bedesignated and selected based on the number of the conductive pads 212C.In some alternative embodiments, an integrated passive device (IPD) (notshown) may optionally be disposed on the redistribution layer 212 andelectrically connected to the redistribution layer 212.

Referring to FIG. 2F, in some embodiments, after forming theredistribution layer 212 and the conductive balls 214, the structureshown in FIG. 2E may be turned upside down and attached to a tape 301(e.g., a dicing tape) supported by a frame 302. As illustrated in FIG.2F, the carrier CR is debonded and is separated from the redistributionlayer 202. In some embodiments, the de-bonding process includesprojecting a light such as a laser light or an UV light on the debondlayer DB (e.g., the LTHC release layer) so that the carrier CR can beeasily removed along with the debond layer DB. During the de-bondingstep, the tape 301 is used to secure the package structure beforede-bonding the carrier CR and the debond layer DB. After the de-bondingprocess, a backside surface 202-BS of the redistribution layer 202 isrevealed or exposed. In certain embodiments, a dielectric layer 202A ofthe redistribution layer 202 is revealed or exposed.

Referring to FIG. 2G, in a next step, a first insulating film 104A islaminated on the redistribution layer 202 to cover the exposed backsidesurface 202-BS of the redistribution layer 202. In some embodiments, thefirst insulating film 104A is laminated on the redistribution layer 202through a vacuum laminator. Furthermore, in certain embodiments, thefirst insulating film 104A is cured at a temperature range of 150° C. to180° C. after lamination so that the first insulating film 104A can beproperly adhered onto the redistribution layer 202. In the exemplaryembodiment, the first insulating film 104A is prepared using the samemethod described for the insulating film 104 in FIG. 1A, FIG. 1B, andhas an arrangement similar to FIG. 1C. In other words, the firstinsulating film 104A contains a resin rich region 104-Re and a fillerrich region 104-Fi. In some embodiments, the filler rich region 104-Fimay constitute a first resin layer RL1, wherein the first resin layerRL1 includes a plurality of fillers Fx. In certain embodiments, theresin rich region 104-Re may constitute a first adhesive layer AL1,wherein the first adhesive layer AL1 is substantially filler free.Furthermore, an interface IF1 is located in between the resin richregion 104-Re and the filler rich region 104-Fi. The thickness ratio ofthe first adhesive layer AL1 to the first resin layer RL1 is the same asthat described for the adhesive layer AL and resin layer RL.Furthermore, the details of the resin material Rx and the fillers Fxused in the first insulating film 104A is the same as those used for theinsulating film 104, and its description will be omitted herein.

As illustrated in FIG. 2G, the resin rich region 104-Re (first adhesivelayer AL1) is sandwiched in between the filler rich region 104-Fi (firstresin layer RL1) and the redistribution layer 202. In some embodiments,the resin rich region 104-Re (first adhesive layer AL1) is separatingthe filler rich region 104-Fi (first resin layer RL1) from theredistribution layer 202. Furthermore, the resin rich region 104-Re(first adhesive layer AL1) is in physical contact with a dielectriclayer 202A of the redistribution layer 202. In certain embodiments,contacting surfaces between the resin rich region 104-Re (first adhesivelayer AL1) and the dielectric layer 202A is free of fillers Fx. In otherwords, the contacting surfaces between the resin rich region 104-Re(first adhesive layer AL1) and the dielectric layer 202A issubstantially planar.

After laminating the first insulating film 104A on the redistributionlayer 202, a plurality of antenna patterns AP is formed on the firstinsulating film 104A. The first insulating film 104A is, for example,located in between the antenna patterns AP and the redistribution layer202. As illustrated in FIG. 2G the antenna patterns AP are formed on thesurface of the first insulating film 104A opposite to a side where theredistribution layer 202 is located. In some embodiments, the antennapatterns AP are electrically coupled with some of the conductive layers202B of the redistribution layer 202, wherein the conductive layers 202Bmay serve as ground plates. In certain embodiments, the antenna patternsAP may be electrically connected to some of the conductive layers 202Bof redistribution layer 202 through a feed line (not shown), thedisclosure is not limited thereto. In some embodiments, the antennapatterns AP are formed by forming a metallization layer (not shown) byelectroplating or deposition over the first insulating film 104A andthen patterning the metallization layer by photolithographic and etchingprocesses. In an alternative embodiment, the antenna patterns AP areformed by forming a metallization layer (not shown) by a platingprocess. In some embodiments, the antenna patterns AP may include patchantennas.

Referring to FIG. 2H, after forming the antenna patterns AP, a dicingprocess is performed along the dicing lines DL (shown in FIG. 2G) to cutthe whole wafer structure (cutting through the first insulating film104A, the insulating encapsulant 210′, and the redistribution layers 202and 212) into a plurality of package structures PK1. In the exemplaryembodiment, the dicing process is a wafer dicing process includingmechanical blade sawing or laser cutting. In a subsequent process, theseparated package structures PK1 may for example, be disposed onto acircuit substrate or onto other components based on requirements.

FIG. 3A to FIG. 3G are schematic sectional views of various stages in amethod of fabricating a package structure according to some exemplaryembodiments of the present disclosure. The method of fabricating thepackage structure shown in FIG. 3A to FIG. 3G is similar to the methodof fabricating the package structure shown in FIG. 2A to FIG. 2H. Hence,the same reference numerals will be used to refer to the same or likedparts, and its detailed description will be omitted herein. Thedifference between the embodiments is in the sequence of the fabricationprocess.

Referring to FIG. 3A, a resin material Rx is provided on the debondlayer DB over the carrier CR, and a plurality of fillers Fx is dispersedin the resin material Rx. Referring to FIG. 3B, a viscosity of the resinmaterial Rx is adjusted or lowered so as to form a first insulating film104A. For example, the viscosity of the resin material Rx is adjusted orlowered so that the dispersed fillers Fx can be clustered on one side ofthe resin material Rx to define a filler rich region 104-Fi (first resinlayer RL1) and a resin rich region 104-Re (first adhesive layer AL1).The filler rich region 104-Fi (first resin layer RL1) is, for example,located in between the resin rich region 104-Re (first adhesive layerAL1) and the debond layer DB, and an interface IF1 exist between thefiller rich region 104-Fi (first resin layer RL1) and the resin richregion 104-Re (first adhesive layer AL1).

Referring to FIG. 3C, a redistribution layer 202 is formed on the firstinsulating film 104A. For example, the dielectric layer 202A of theredistribution layer 202 is adhered to the resin rich region 104-Re(first adhesive layer AL1) of the first insulating film 104. Referringto FIG. 3D, after forming the redistribution layer 202, the sameprocessing steps may be performed to dispose semiconductor dies 206 onthe redistribution layer 202, and to form through insulator vias 204 anddipole antenna 208 on the redistribution layer 202. Thereafter, aninsulating material 210 is formed on the redistribution layer 202 tocover the semiconductor dies 206, the through insulator vias 204 anddipole antenna 208.

Referring to FIG. 3E, in a subsequent step, the insulating material 210is planarized to form an insulating encapsulant 210′. Thereafter, aredistribution layer 212 is formed on the insulating encapsulant 210′,the through insulator vias 204, the dipole antenna 208, and on thesemiconductor die 206. For example, the redistribution layer 212 iselectrically connected to the through insulator vias 204, thesemiconductor die 206 and the dipole antenna 208. Subsequently, aplurality of conductive pads 212C may be disposed on the redistributionlayer 212 and be electrically connected to the conductive layers 212B.Conductive balls 214 may then be disposed on the conductive pads 212C bya ball placement process or reflow process.

Referring to FIG. 3F, after forming the redistribution layer 212 and theconductive balls 214, the structure shown in FIG. 3E may be turnedupside down and attached to a tape supported by a frame (not shown).Subsequently, the carrier CR is debonded and is separated from the firstinsulating film 104A to reveal a backside of the first insulating film104A. For example, the de-bonding process includes projecting a lightsuch as a laser light or an UV light on the debond layer DB (e.g., theLTHC release layer) so that the carrier CR can be easily removed alongwith the debond layer DB. After the de-bonding process, a plurality ofantenna patterns AP is then formed on the first insulating film 104A.

Referring to FIG. 3G, after forming the antenna patterns AP, a dicingprocess is performed along the dicing lines DL (shown in FIG. 3F) to cutthe whole wafer structure (cutting through the first insulating film104A, the insulating encapsulant 210′, and the redistribution layers 202and 212) into a plurality of package structures PK1. In the exemplaryembodiment, the dicing process is a wafer dicing process includingmechanical blade sawing or laser cutting. In a subsequent process, theseparated package structures PK1 may for example, be disposed onto acircuit substrate or onto other components based on requirements.

FIG. 4 is a package structure according to some embodiments of thepresent disclosure. The package structure PK2 illustrated in FIG. 4 issimilar to the package structure PK1 illustrated in FIG. 2H and FIG. 3G.Hence, the same reference numerals will be used to refer to the same orliked parts, and its detailed description will be omitted herein. Thedifference between the embodiments is that a second insulating film 104Bis further provided.

As illustrated in FIG. 4 , after laminating the first insulating film104A on the redistribution layer 202, a second insulating film 104B islaminated on the first insulating film 104A. In some embodiments, thesecond insulating film 104B is laminated on the first insulating film104A through a vacuum laminator. Furthermore, in certain embodiments,the second insulating film 104B is cured at a temperature range of 150°C. to 180° C. after lamination so that the second insulating film 104Bcan be properly adhered onto the first insulating film 104A. In theexemplary embodiment, the second insulating film 104B is prepared usingthe same method described for the insulating film 104 in FIG. 1A, FIG.1B, and has an arrangement similar to FIG. 1C. In other words, thesecond insulating film 104B contains a resin rich region 104-Re and afiller rich region 104-Fi. In some embodiments, the filler rich region104-Fi may constitute a second resin layer RL2, wherein the second resinlayer RL2 includes a plurality of fillers Fx. In certain embodiments,the resin rich region 104-Re may constitute a second adhesive layer AL2,wherein the second adhesive layer AL2 is substantially filler free.Furthermore, an interface IF2 is located in between the resin richregion 104-Re (second adhesive layer AL2) and the filler rich region104-Fi (second resin layer RL2). The thickness ratio of the secondadhesive layer AL2 to the second resin layer RL2 is the same as thatdescribed for the adhesive layer AL and resin layer RL. Furthermore, thedetails of the resin material Rx and the fillers Fx used in the secondinsulating film 104B is the same as those used for the insulating film104, and its description will be omitted herein.

Furthermore, as illustrated in FIG. 4 , the resin rich region 104-Re(second adhesive layer AL2) is sandwiched in between the filler richregion 104-Fi (second resin layer RL2) of the second insulating film104B and the filler rich region 104-Fi (first resin layer RL1) of thefirst insulating film 104A. Furthermore, the resin rich region 104-Re(second adhesive layer AL2) of the second insulating film 104B is inphysical contact with the filler rich region 104-Fi (first resin layerRL1) of the first insulating film 104A. Although only two insulatingfilms (104A/104B) are illustrated herein, the disclosure is not limitedthereto. In some other embodiments, more than two insulating films maybe disposed on the redistribution layer 202, wherein the insulatingfilms are adhered to one another through the resin rich region (adhesivelayer). In certain embodiments, the plurality of antenna patterns AP isdisposed on the second insulating film 104B. In some embodiments, thesecond insulating film 104B is sandwiched between the antenna patternsAP and the first insulating film 104A.

FIG. 5 is a package structure according to some other embodiments of thepresent disclosure. The package structure PK3 illustrated in FIG. 5 issimilar to the package structure PK2 illustrated in FIG. 4 . Hence, thesame reference numerals will be used to refer to the same or likedparts, and its detailed description will be omitted herein. Thedifference between the embodiments is that the resin rich region 104-Re(second adhesive layer AL2) of the second insulating film 104B isomitted in FIG. 5 .

As illustrated in FIG. 5 , after laminating a first insulating film 104Aon the redistribution layer 202, a second insulating film 104B islaminated on the first insulating film 104A. In the exemplaryembodiment, the second insulating film 104B contains a filler richregion 104-Fi (second resin layer RL2), whereas the resin rich region isomitted. For example, the filler rich region 104-Fi (second resin layerRL2) of the second insulating film 104B is in physical contact with thefiller rich region 104-Fi (first resin layer RL1) of the firstinsulating film 104A. Since both of the filler rich region 104-Fi of thefirst insulating film 104A and the second insulating film 104B includesadhesive resin materials Rx, the first insulating film 104A and secondinsulating film 104B may still be sufficiently adhered to one another.However, a resin rich region 104-Re (first adhesive layer AL1) ispresent in the first insulating film 104A so as to prevent thedelamination between the redistribution layer 202 and the firstinsulating film 104A.

According to the above embodiments, since the package structure includesan insulating film having a filler rich region (resin layer withfillers) and a resin rich region (adhesive layer), the insulating filmcan have a higher adhesion strength to the redistribution layer. Inaddition, no further modification of material or surface treatment onthe redistribution layer is required to improve the adhesion strength.Therefore, by using an insulating film with such a design, thedelamination issue between the insulating film and the redistributionlayer due to stress induced by CTE (coefficient of thermal expansion)mismatch coming from various materials can be resolved. Furthermore,with the improved adhesion strength, the package structure can sustainbending stress during thermal cycle testing without delamination.

In some embodiments of the present disclosure, a package structureincluding at least one semiconductor die, an insulating encapsulant, afirst redistribution layer, a second redistribution layer, a pluralityof antenna elements and a first insulating film is provided. Theinsulating encapsulant is encapsulating the at least one semiconductordie, the insulating encapsulant has a first surface and a second surfaceopposite to the first surface. The first redistribution layer isdisposed on the first surface of the insulating encapsulant. The secondredistribution layer is disposed on the second surface of the insulatingencapsulant. The plurality of antenna elements is located over thesecond redistribution layer. The first insulating film is disposed inbetween the second redistribution layer and the plurality of antennaelements, wherein the first insulating film comprises a resin richregion and a filler rich region, the resin rich region is located inbetween the filler rich region and the second redistribution layer andseparating the filler rich region from the second redistribution layer.

In some other embodiments of the present disclosure, a package structureincluding an insulating encapsulant, at least one semiconductor die, afirst redistribution layer, a second redistribution layer, a pluralityof antenna elements, a first resin layer and a first adhesive layer isprovided. The insulating encapsulant has a first surface and a secondsurface opposite to the first surface. The at least one semiconductordie is embedded within the insulating encapsulant. The firstredistribution layer is disposed on the first surface of the insulatingencapsulant. The second redistribution layer is disposed on the secondsurface of the insulating encapsulant. The plurality of antenna elementsis located over the second redistribution layer. The first resin layeris disposed in between the second redistribution layer and the pluralityof antenna elements, wherein the first resin layer includes fillers. Thefirst adhesive layer is disposed in between the first resin layer andthe second redistribution layer, wherein the first adhesive layer andthe first resin layer are made of the same resin material.

In yet another embodiment of the present disclosure, a method offabricating a package structure is described. The method includes thefollowing steps. A bottom redistribution layer is formed on a carrier.At least one semiconductor die is placed on the bottom redistributionlayer. An insulating encapsulant is formed to encapsulate the at leastone semiconductor die. A top redistribution layer is formed over theinsulating encapsulant. The carrier is de-bonded to reveal a backsidesurface of the bottom redistribution layer. A first insulating film islaminated on the backside surface of the bottom redistribution layer,wherein the first insulating film includes a resin rich region and afiller rich region, the resin rich region is located in between thefiller rich region and the bottom redistribution layer and separatingthe filler rich region from the second redistribution layer. A pluralityof antenna elements is provided over the first insulating film.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method, comprising: forming a resin materialover a support; dispersing a plurality of fillers in the resin material;adding solvents into the resin material to adjust a viscosity of theresin material, and baking and curing the resin material so that theplurality of fillers is clustered on one side of the resin material todefine a filler-rich region including the plurality of fillers and aresin-rich region that is substantially filler free; and peeling off theresin material from the support and laminating the resin material on aredistribution layer, wherein the resin material is attached to theredistribution layer through the resin-rich region.
 2. The methodaccording to claim 1, wherein after the baking and curing of the resinmaterial, a ratio of a thickness of the filler-rich region to athickness of the resin-rich region is in a range of 1:75 to 1:360. 3.The method according to claim 1, wherein the viscosity of the resinmaterial is adjusted to 3000 cP or less.
 4. The method according toclaim 3, wherein the viscosity of the resin material is adjusted to arange of 10 cP to 500 cP.
 5. The method according to claim 1, whereinafter laminating the resin material on the redistribution layer, theresin material is further cured at a temperature range of 150° C. to180° C.
 6. The method according to claim 1, further comprising forming aplurality of antenna patterns on the filler-rich region of the resinmaterial.
 7. The method according to claim 6, further comprising:laminating a second resin material on the resin material prior toforming the plurality of antenna patterns, wherein the second resinmaterial includes a second filler-rich region including a plurality ofsecond fillers and a second resin-rich region that is substantiallyfiller free.
 8. A method, comprising: providing a semiconductor die;forming through insulator vias surrounding the semiconductor die;forming an insulating encapsulant encapsulating the semiconductor dieand the through insulator vias; forming an insulating film over theinsulating encapsulant, wherein the insulating film is formed bydispersing fillers into a resin material and adjusting the viscosity ofthe resin material to 3000 cP or less; and forming antenna patterns onthe insulating film, wherein the antenna patterns are overlapped withthe through insulator vias.
 9. The method according to claim 8, whereinthe insulating film is formed by dispersing the fillers into the resinmaterial and adjusting the viscosity of the resin material to a range of10 cP to 500 cP.
 10. The method according to claim 8, furthercomprising; forming a first redistribution layer and a secondredistribution layer on two opposing sides of the insulatingencapsulant, wherein the insulating film is adhered onto the firstredistribution layer through the resin material.
 11. The methodaccording to claim 8, wherein after adjusting the viscosity of the resinmaterial to 3000 cP or less, a first layer including the fillers and asecond layer that is substantially filler free is formed in theinsulating film.
 12. The method according to claim 11, wherein a contentof the fillers located in the first layer is more than 80% by weightbased on a total weight of the insulating film.
 13. The method accordingto claim 11, wherein an interface is formed between the first layer andthe second layer, and the interface is an uneven interface.
 14. Themethod according to claim 8, further comprises laminating a secondinsulating film on the insulating film prior to forming the antennapatterns, wherein the second insulating film includes second fillersdispersed in a second resin material.
 15. A method, comprising: formingpackage structure components over a substrate; and forming an insulatingfilm over a dielectric layer surface of the package structurecomponents, wherein the insulating film is formed with a resin-richregion and a filler-rich region, the resin-rich region is attached tothe dielectric layer surface, and a ratio of a thickness of theresin-rich region to a thickness of the filler-rich region is in a rangeof 1:75 to 1:360.
 16. The method according to claim 15, wherein formingthe package structure components comprises: forming a firstredistribution layer on the substrate, wherein the first redistributionlayer includes the dielectric layer surface; forming a semiconductor dieon the first redistribution layer; and forming a second redistributionlayer on the semiconductor die and electrically connected to thesemiconductor die.
 17. The method according to claim 15, wherein acontent of fillers located in the filler-rich region is more than 80% byweight based on a total weight of the insulating film, and the contentof fillers located in the resin-rich region is less than 10% by weightbased on the total weight of the insulating film.
 18. The methodaccording to claim 15, wherein the insulating film with the resin-richregion and a filler-rich region is formed by dispersing fillers into aresin material and adjusting the viscosity of the resin material to arange of 10 cP to 500 cP.
 19. The method according to claim 18, whereinthe viscosity of the resin material is adjusted by adding solvents ordiluents into the resin material.
 20. The method according to claim 15,further comprises forming a second insulating film over the insulatingfilm, wherein the second insulating film is formed with a secondresin-rich region and a second filler-rich region, the second resin-richregion is sandwiched between the second filler-rich region and thefiller-rich region of the insulating film, and a ratio of a thickness ofthe second resin-rich region to a thickness of the second filler-richregion is in a range of 1:75 to 1:360.